01e2c4b909b971b72396 · A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators
We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar
{
"title_en": "A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators",
"designation": "",
"series": "",
"status": "",
"date": "2001-01-01",
"date_original": "January 1, 2001",
"url": "https://www.nist.gov/publications/comparison-quantum-mechanical-capacitance-voltage-simulators",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Curt A. Richter , Allen R. Hefner Jr. , Eric M. Vogel",
"abstract_excerpt_en": "We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar",
"id": "01e2c4b909b971b72396",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "A Comparison of Quantum-Mechanical Capacitance-Voltage Simulators",
"designation": "",
"series": "",
"status": "",
"date": "2001-01-01",
"date_original": "January 1, 2001",
"url": "https://www.nist.gov/publications/comparison-quantum-mechanical-capacitance-voltage-simulators",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Curt A. Richter , Allen R. Hefner Jr. , Eric M. Vogel",
"abstract_excerpt_en": "We have systematically compared the results of an extensive ensemble of the most advanced available quantum-mechanical capacitance-voltage simulation and analysis packages for a range of metal-oxide-semiconductor device parameters. While all have similar"
}
],
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}