NIST · ИТ · 094325ca383a19fc5147
Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
A compact circuit simulator model is used to describe the performance of a 2000-V, 5-A 4-H Silicon Carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Silicon (Si) power MOSFET. The model's
NIST · ИТОфициальный источник · 2003-06-11
{
"title_en": "Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence",
"designation": "",
"series": "",
"status": "",
"date": "2003-06-11",
"date_original": "June 11, 2003",
"url": "https://www.nist.gov/publications/silicon-carbide-power-mosfet-model-and-parameter-extraction-sequence",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , Alan Mantooth, David W. Berning , Sei-Hyung Ryu",
"abstract_excerpt_en": "A compact circuit simulator model is used to describe the performance of a 2000-V, 5-A 4-H Silicon Carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Silicon (Si) power MOSFET. The model's",
"id": "094325ca383a19fc5147",
"sources": [
"NIST Publications"
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"source_records": [
{
"title_en": "Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence",
"designation": "",
"series": "",
"status": "",
"date": "2003-06-11",
"date_original": "June 11, 2003",
"url": "https://www.nist.gov/publications/silicon-carbide-power-mosfet-model-and-parameter-extraction-sequence",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , Alan Mantooth, David W. Berning , Sei-Hyung Ryu",
"abstract_excerpt_en": "A compact circuit simulator model is used to describe the performance of a 2000-V, 5-A 4-H Silicon Carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Silicon (Si) power MOSFET. The model's"
}
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}