NIST · ИТ · 0bf877de4f3deb7f7ba1
Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power
NIST · ИТОфициальный источник · 2006-03-22
{
"title_en": "Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2006-03-22",
"date_original": "March 22, 2006",
"url": "https://www.nist.gov/publications/status-high-voltage-high-frequency-silicon-carbide-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Allen R. Hefner Jr.",
"abstract_excerpt_en": "The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power",
"id": "0bf877de4f3deb7f7ba1",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2006-03-22",
"date_original": "March 22, 2006",
"url": "https://www.nist.gov/publications/status-high-voltage-high-frequency-silicon-carbide-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Allen R. Hefner Jr.",
"abstract_excerpt_en": "The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power"
}
],
"translation_state": "none"
}