NIST · ИТ · 1ff3b659517ae29dd24f
Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices
This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single
NIST · ИТОфициальный источник · 2007-02-25
{
"title_en": "Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2007-02-25",
"date_original": "February 25, 2007",
"url": "https://www.nist.gov/publications/long-term-stability-test-system-high-voltage-high-frequency-sic-power-devices",
"source": "NIST Publications",
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"authors_en": "Tam H. Duong , David Berning, Allen R. Hefner Jr. , Keyue M. Smedley",
"abstract_excerpt_en": "This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single",
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{
"title_en": "Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2007-02-25",
"date_original": "February 25, 2007",
"url": "https://www.nist.gov/publications/long-term-stability-test-system-high-voltage-high-frequency-sic-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Tam H. Duong , David Berning, Allen R. Hefner Jr. , Keyue M. Smedley",
"abstract_excerpt_en": "This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard switching conditions. The system is designed to operate a single power switch and a single"
}
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