NIST · ИТ · 2109e492c197fee12a0b
Reliability and Performance Limitations in SiC Power Devices
Despite Silicon Carbide's (SiC's) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes
NIST · ИТОфициальный источник · 2005-12-27
{
"title_en": "Reliability and Performance Limitations in SiC Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2005-12-27",
"date_original": "December 27, 2005",
"url": "https://www.nist.gov/publications/reliability-and-performance-limitations-sic-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ranbir Singh , Allen R. Hefner Jr.",
"abstract_excerpt_en": "Despite Silicon Carbide's (SiC's) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes",
"id": "2109e492c197fee12a0b",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Reliability and Performance Limitations in SiC Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2005-12-27",
"date_original": "December 27, 2005",
"url": "https://www.nist.gov/publications/reliability-and-performance-limitations-sic-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ranbir Singh , Allen R. Hefner Jr.",
"abstract_excerpt_en": "Despite Silicon Carbide's (SiC's) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes"
}
],
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}