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256fb14ff53d3ec28051 · INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH

INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH

We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the

Официальный источник · 2005-12-01

Полные импортированные сведения карточки
{
  "title_en": "INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2005-12-01",
  "date_original": "December 1, 2005",
  "url": "https://www.nist.gov/publications/inter-laboratory-comparison-noise-parameter-measurements-cmos-devices-012-um-gate",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "James P. Randa , Susan L. Sweeney, Tom McKay, Dave K. Walker , David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik",
  "abstract_excerpt_en": "We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the",
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      "title_en": "INTER-LABORATORY COMPARISON OF NOISE-PARAMETER MEASUREMENTS ON CMOS DEVICES WITH 0.12 um GATE LENGTH",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2005-12-01",
      "date_original": "December 1, 2005",
      "url": "https://www.nist.gov/publications/inter-laboratory-comparison-noise-parameter-measurements-cmos-devices-012-um-gate",
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      "authors_en": "James P. Randa , Susan L. Sweeney, Tom McKay, Dave K. Walker , David R. Greenberg, Jon Tao, Judah Mendez, G. Ali Rezvani, John J. Pekarik",
      "abstract_excerpt_en": "We present results of an interlaboratory comparison of S-parameter and noise-parameter measurements performed on 0.12 υm gate-length CMOS transistors. Copies of the same device were measured at three different laboratories (IBM, NIST, RFMD), and the"
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