NIST · ИТ · 319e9eaafa614f9eae0e
10 kV, 5A 4H-SiC Power DMOSFET
In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 υm thick n-type epilayers with
NIST · ИТОфициальный источник · 2006-05-01
{
"title_en": "10 kV, 5A 4H-SiC Power DMOSFET",
"designation": "",
"series": "",
"status": "",
"date": "2006-05-01",
"date_original": "May 1, 2006",
"url": "https://www.nist.gov/publications/10-kv-5a-4h-sic-power-dmosfet",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Sei-Hyung Ryu, Sumi Krishnaswami, Hull Brett, James Richmond, Anant Agarwal, Allen R. Hefner Jr.",
"abstract_excerpt_en": "In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 υm thick n-type epilayers with",
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{
"title_en": "10 kV, 5A 4H-SiC Power DMOSFET",
"designation": "",
"series": "",
"status": "",
"date": "2006-05-01",
"date_original": "May 1, 2006",
"url": "https://www.nist.gov/publications/10-kv-5a-4h-sic-power-dmosfet",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Sei-Hyung Ryu, Sumi Krishnaswami, Hull Brett, James Richmond, Anant Agarwal, Allen R. Hefner Jr.",
"abstract_excerpt_en": "In this paper, we report 4H-SiC power DMOSFETs capable of blocking 10 kV. The devices were scaled up to 5 A, which is a factor of 25 increase in device area compared to the previously reported value. The devices utilized 100 υm thick n-type epilayers with"
}
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}