32ee04506282571bae3d · Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique

{
  "title_en": "Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2013-01-01",
  "date_original": "January 1, 2013",
  "url": "https://www.nist.gov/publications/observation-interfacenear-interface-defects-4h-sic-mosfets-new-electrically-detected",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Jason Ryan , Brad Bittel, Pat Lenahan, Jody Fronheiser, Aivars Lelis",
  "abstract_excerpt_en": "We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Additionally SDCP",
  "id": "32ee04506282571bae3d",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Observation of Interface/Near Interface Defects in 4H SiC MOSFETs With a New Electrically Detected Magnetic Resonance Technique",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2013-01-01",
      "date_original": "January 1, 2013",
      "url": "https://www.nist.gov/publications/observation-interfacenear-interface-defects-4h-sic-mosfets-new-electrically-detected",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Jason Ryan , Brad Bittel, Pat Lenahan, Jody Fronheiser, Aivars Lelis",
      "abstract_excerpt_en": "We study 4H SiC MOSFETs with a new electrically detected magnetic resonance technique (EDMR) we call spin dependent charge pumping (SDCP). Our SDCP results demonstrate a tremendous improvement in sensitivity over other EDMR techniques. Additionally SDCP"
    }
  ],
  "translation_state": "none"
}