NIST · ИТ · 34e84cf68d267f94003f
Verification of a Foundry-Developed Transistor Model with Measurement Uncertainty
We verify a foundry model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the verification process, and use them to quantify the
NIST · ИТОфициальный источник · 2016-05-26
{
"title_en": "Verification of a Foundry-Developed Transistor Model with Measurement Uncertainty",
"designation": "",
"series": "",
"status": "",
"date": "2016-05-26",
"date_original": "May 26, 2016",
"url": "https://www.nist.gov/publications/verification-foundry-developed-transistor-model-measurement-uncertainty",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Dylan Williams , Richard Chamberlin , Wei Zhao, Jerome Cheron , Urteaga Miguel",
"abstract_excerpt_en": "We verify a foundry model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the verification process, and use them to quantify the",
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{
"title_en": "Verification of a Foundry-Developed Transistor Model with Measurement Uncertainty",
"designation": "",
"series": "",
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"date": "2016-05-26",
"date_original": "May 26, 2016",
"url": "https://www.nist.gov/publications/verification-foundry-developed-transistor-model-measurement-uncertainty",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Dylan Williams , Richard Chamberlin , Wei Zhao, Jerome Cheron , Urteaga Miguel",
"abstract_excerpt_en": "We verify a foundry model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the verification process, and use them to quantify the"
}
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