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366b9338652bc1f7bacb · Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects

Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects

We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were

Официальный источник · 2007-01-01

Полные импортированные сведения карточки
{
  "title_en": "Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2007-01-01",
  "date_original": "January 1, 2007",
  "url": "https://www.nist.gov/publications/strain-induced-grain-growth-during-rapid-thermal-cycling-aluminum-interconnects",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Robert Keller , Roy H. Geiss , Nicholas Barbosa , Andrew Slifka , David T. Read",
  "abstract_excerpt_en": "We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were",
  "id": "366b9338652bc1f7bacb",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2007-01-01",
      "date_original": "January 1, 2007",
      "url": "https://www.nist.gov/publications/strain-induced-grain-growth-during-rapid-thermal-cycling-aluminum-interconnects",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Robert Keller , Roy H. Geiss , Nicholas Barbosa , Andrew Slifka , David T. Read",
      "abstract_excerpt_en": "We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were"
    }
  ],
  "translation_state": "none"
}