472592bc8dd5a044cbc6 · Multiport Investigation of the Coupling of High-Impedance Probes
Multiport Investigation of the Coupling of High-Impedance Probes
We used an on-wafer measurement technique that combines two- and three-port frequency-domain mismatch corrections in order to characterize the influence of a high-impedance probe on a device under test. The procedure quantifies the probes load of the
{
"title_en": "Multiport Investigation of the Coupling of High-Impedance Probes",
"designation": "",
"series": "",
"status": "",
"date": "2004-11-01",
"date_original": "November 1, 2004",
"url": "https://www.nist.gov/publications/multiport-investigation-coupling-high-impedance-probes",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Dylan F. Williams , Pavel Kabos , Uwe Arz",
"abstract_excerpt_en": "We used an on-wafer measurement technique that combines two- and three-port frequency-domain mismatch corrections in order to characterize the influence of a high-impedance probe on a device under test. The procedure quantifies the probes load of the",
"id": "472592bc8dd5a044cbc6",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Multiport Investigation of the Coupling of High-Impedance Probes",
"designation": "",
"series": "",
"status": "",
"date": "2004-11-01",
"date_original": "November 1, 2004",
"url": "https://www.nist.gov/publications/multiport-investigation-coupling-high-impedance-probes",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Dylan F. Williams , Pavel Kabos , Uwe Arz",
"abstract_excerpt_en": "We used an on-wafer measurement technique that combines two- and three-port frequency-domain mismatch corrections in order to characterize the influence of a high-impedance probe on a device under test. The procedure quantifies the probes load of the"
}
],
"translation_state": "none"
}