4e51151c615d09d46186 · An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

{
  "title_en": "An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)",
  "designation": "",
  "series": "",
  "status": "",
  "date": "1990-10-01",
  "date_original": "October 1, 1990",
  "url": "https://www.nist.gov/publications/improved-understanding-transient-operation-power-insulated-gate-bipolar-transistor-igbt",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Allen R. Hefner Jr.",
  "abstract_excerpt_en": "",
  "id": "4e51151c615d09d46186",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)",
      "designation": "",
      "series": "",
      "status": "",
      "date": "1990-10-01",
      "date_original": "October 1, 1990",
      "url": "https://www.nist.gov/publications/improved-understanding-transient-operation-power-insulated-gate-bipolar-transistor-igbt",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Allen R. Hefner Jr.",
      "abstract_excerpt_en": ""
    }
  ],
  "translation_state": "none",
  "possible_title_matches": 1
}