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NIST · ИТ · 52abc998994c4f408605

52abc998994c4f408605 · Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices

Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices

Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to

Официальный источник · 2005-04-04

Полные импортированные сведения карточки
{
  "title_en": "Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2005-04-04",
  "date_original": "April 4, 2005",
  "url": "https://www.nist.gov/publications/metrology-high-voltage-high-speed-silicon-carbide-power-devices",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Allen R. Hefner Jr. , David W. Berning , Colleen E. Hood",
  "abstract_excerpt_en": "Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to",
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  "sources": [
    "NIST Publications"
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  "source_records": [
    {
      "title_en": "Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices",
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      "series": "",
      "status": "",
      "date": "2005-04-04",
      "date_original": "April 4, 2005",
      "url": "https://www.nist.gov/publications/metrology-high-voltage-high-speed-silicon-carbide-power-devices",
      "source": "NIST Publications",
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      "authors_en": "Allen R. Hefner Jr. , David W. Berning , Colleen E. Hood",
      "abstract_excerpt_en": "Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to"
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