NIST · ИТ · 52ad5060af41b6945af0
Compact Models for Silicon Carbide Power Devices
The development of compact silicon carbide (SiC) power semiconductor device models for circuit simulation is described. The work detailed herein has been used to model power Schottky, Merged-PiN-Schottky, PiN diode, and MOSFET models. In these models, the
NIST · ИТОфициальный источник · 2004-10-01
{
"title_en": "Compact Models for Silicon Carbide Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2004-10-01",
"date_original": "October 1, 2004",
"url": "https://www.nist.gov/publications/compact-models-silicon-carbide-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , Alan Mantooth, David W. Berning , Ranbir Singh",
"abstract_excerpt_en": "The development of compact silicon carbide (SiC) power semiconductor device models for circuit simulation is described. The work detailed herein has been used to model power Schottky, Merged-PiN-Schottky, PiN diode, and MOSFET models. In these models, the",
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{
"title_en": "Compact Models for Silicon Carbide Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2004-10-01",
"date_original": "October 1, 2004",
"url": "https://www.nist.gov/publications/compact-models-silicon-carbide-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , Alan Mantooth, David W. Berning , Ranbir Singh",
"abstract_excerpt_en": "The development of compact silicon carbide (SiC) power semiconductor device models for circuit simulation is described. The work detailed herein has been used to model power Schottky, Merged-PiN-Schottky, PiN diode, and MOSFET models. In these models, the"
}
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}