556313919ec73a66c877 · Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions

{
  "title_en": "Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions",
  "designation": "",
  "series": "",
  "status": "",
  "date": "1998-12-31",
  "date_original": "December 31, 1998",
  "url": "https://www.nist.gov/publications/failure-dynamics-igbt-during-turn-unclamped-inductive-loading-conditions",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Chien-Chung Shen, Allen R. Hefner Jr. , David W. Berning , J B. Bernstein",
  "abstract_excerpt_en": "The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Revers",
  "id": "556313919ec73a66c877",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Failure Dynamics of the IGBT During Turn-Off for Unclamped Inductive Loading Conditions",
      "designation": "",
      "series": "",
      "status": "",
      "date": "1998-12-31",
      "date_original": "December 31, 1998",
      "url": "https://www.nist.gov/publications/failure-dynamics-igbt-during-turn-unclamped-inductive-loading-conditions",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Chien-Chung Shen, Allen R. Hefner Jr. , David W. Berning , J B. Bernstein",
      "abstract_excerpt_en": "The internal failure dynamics of the Insulated Gate Bipolar Transistor (IBGT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive Revers"
    }
  ],
  "translation_state": "none",
  "possible_title_matches": 1
}