573c7f9c98f673e975db · MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching

{
  "title_en": "MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2000-01-01",
  "date_original": "January 1, 2000",
  "url": "https://www.nist.gov/publications/mos-gated-thyristors-mcts-repetitive-high-power-switching",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Stephen B. Bayne, W. M. Portnoy, G. J. Rohwein, Allen R. Hefner Jr.",
  "abstract_excerpt_en": "",
  "id": "573c7f9c98f673e975db",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "MOS-Gated Thyristors (MCTs) for Repetitive High Power Switching",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2000-01-01",
      "date_original": "January 1, 2000",
      "url": "https://www.nist.gov/publications/mos-gated-thyristors-mcts-repetitive-high-power-switching",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Stephen B. Bayne, W. M. Portnoy, G. J. Rohwein, Allen R. Hefner Jr.",
      "abstract_excerpt_en": ""
    }
  ],
  "translation_state": "none"
}