NIST · ИТ · 57de64f94c7a535b5c18
Reliability of SiC MOS Devices
Fundamental limitations to oxide reliability are analyzed in silicon carbide based devices. A barrier height primarily determined by band offsets between metal/SiC and the dielectric, and the electric field in the dielectric results in tunneling current
NIST · ИТОфициальный источник · 2004-06-24
{
"title_en": "Reliability of SiC MOS Devices",
"designation": "",
"series": "",
"status": "",
"date": "2004-06-24",
"date_original": "June 24, 2004",
"url": "https://www.nist.gov/publications/reliability-sic-mos-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ranbir Singh , Allen R. Hefner Jr.",
"abstract_excerpt_en": "Fundamental limitations to oxide reliability are analyzed in silicon carbide based devices. A barrier height primarily determined by band offsets between metal/SiC and the dielectric, and the electric field in the dielectric results in tunneling current",
"id": "57de64f94c7a535b5c18",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Reliability of SiC MOS Devices",
"designation": "",
"series": "",
"status": "",
"date": "2004-06-24",
"date_original": "June 24, 2004",
"url": "https://www.nist.gov/publications/reliability-sic-mos-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ranbir Singh , Allen R. Hefner Jr.",
"abstract_excerpt_en": "Fundamental limitations to oxide reliability are analyzed in silicon carbide based devices. A barrier height primarily determined by band offsets between metal/SiC and the dielectric, and the electric field in the dielectric results in tunneling current"
}
],
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}