NIST · ИТ · 653281acf2bc745b192d
High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers
This paper reports in detail, the design, a manufactuable fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were
NIST · ИТОфициальный источник · 2001-06-07
{
"title_en": "High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers",
"designation": "",
"series": "",
"status": "",
"date": "2001-06-07",
"date_original": "June 7, 2001",
"url": "https://www.nist.gov/publications/high-temperature-characteristics-5kv-20-4h-sic-pin-rectifiers",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ranbir Singh, Allen R. Hefner Jr. , David W. Berning , M. Palmer",
"abstract_excerpt_en": "This paper reports in detail, the design, a manufactuable fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were",
"id": "653281acf2bc745b192d",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "High Temperature Characteristics of 5kV, 20 A 4H-SiC PiN Rectifiers",
"designation": "",
"series": "",
"status": "",
"date": "2001-06-07",
"date_original": "June 7, 2001",
"url": "https://www.nist.gov/publications/high-temperature-characteristics-5kv-20-4h-sic-pin-rectifiers",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ranbir Singh, Allen R. Hefner Jr. , David W. Berning , M. Palmer",
"abstract_excerpt_en": "This paper reports in detail, the design, a manufactuable fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 5 kV, 20 A rating. A highly doped p-type epitaxial Anode layer and junction termination extension (JTE) were"
}
],
"translation_state": "none"
}