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NIST · ИТ · 683e5767c5cfcb893d09

683e5767c5cfcb893d09 · Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges

Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges

Positive ion bombardment plays an essential role in plasma processing, influencing etch rates, materials selectivity and etching profiles. Experimental determination of ion identities and energies in processing plasmas provides complementary data necessary

Официальный источник · 2001-01-01

Полные импортированные сведения карточки
{
  "title_en": "Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2001-01-01",
  "date_original": "January 1, 2001",
  "url": "https://www.nist.gov/publications/comparison-identities-fluxes-and-energies-ions-formed-high-density-fluorocarbon",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Amanda N. Goyettes, Yicheng Wang , James K. Olthoff",
  "abstract_excerpt_en": "Positive ion bombardment plays an essential role in plasma processing, influencing etch rates, materials selectivity and etching profiles. Experimental determination of ion identities and energies in processing plasmas provides complementary data necessary",
  "id": "683e5767c5cfcb893d09",
  "sources": [
    "NIST Publications"
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  "source_records": [
    {
      "title_en": "Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2001-01-01",
      "date_original": "January 1, 2001",
      "url": "https://www.nist.gov/publications/comparison-identities-fluxes-and-energies-ions-formed-high-density-fluorocarbon",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Amanda N. Goyettes, Yicheng Wang , James K. Olthoff",
      "abstract_excerpt_en": "Positive ion bombardment plays an essential role in plasma processing, influencing etch rates, materials selectivity and etching profiles. Experimental determination of ion identities and energies in processing plasmas provides complementary data necessary"
    }
  ],
  "translation_state": "none"
}