NIST · ИТ · 7496e7a3b94dc00deb1a
High-Voltage Capacitance Measurement System for SiC Power MOSFETs
Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform
NIST · ИТОфициальный источник · 2009-09-24
{
"title_en": "High-Voltage Capacitance Measurement System for SiC Power MOSFETs",
"designation": "",
"series": "",
"status": "",
"date": "2009-09-24",
"date_original": "September 24, 2009",
"url": "https://www.nist.gov/publications/high-voltage-capacitance-measurement-system-sic-power-mosfets",
"source": "NIST Publications",
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"authors_en": "Parrish Ralston, Tam H. Duong , Nanying Yang , David W. Berning , Colleen E. Hood , Allen R. Hefner Jr. , Kathleen Meehan",
"abstract_excerpt_en": "Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform",
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{
"title_en": "High-Voltage Capacitance Measurement System for SiC Power MOSFETs",
"designation": "",
"series": "",
"status": "",
"date": "2009-09-24",
"date_original": "September 24, 2009",
"url": "https://www.nist.gov/publications/high-voltage-capacitance-measurement-system-sic-power-mosfets",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Parrish Ralston, Tam H. Duong , Nanying Yang , David W. Berning , Colleen E. Hood , Allen R. Hefner Jr. , Kathleen Meehan",
"abstract_excerpt_en": "Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform"
}
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