76dfec907b80d1243c3e · SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY
The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has become
{
"title_en": "SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY",
"designation": "",
"series": "",
"status": "",
"date": "2013-03-25",
"date_original": "March 25, 2013",
"url": "https://www.nist.gov/publications/scatterfield-microscopy-review-techniques-push-fundamental-limits-optical-defect",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Richard M. Silver , Bryan M. Barnes , Francois R. Goasmat , Hui Zhou , Martin Y. Sohn",
"abstract_excerpt_en": "The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has become",
"id": "76dfec907b80d1243c3e",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "SCATTERFIELD MICROSCOPY, REVIEW OF TECHNIQUES THAT PUSH THE FUNDAMENTAL LIMITS OF OPTICAL DEFECT METROLOGY",
"designation": "",
"series": "",
"status": "",
"date": "2013-03-25",
"date_original": "March 25, 2013",
"url": "https://www.nist.gov/publications/scatterfield-microscopy-review-techniques-push-fundamental-limits-optical-defect",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Richard M. Silver , Bryan M. Barnes , Francois R. Goasmat , Hui Zhou , Martin Y. Sohn",
"abstract_excerpt_en": "The semiconductor manufacturing industry is now facing serious challenges in achieving defect detection rates with acceptable throughput and accuracy. With conventional bright-field and dark- field inspection methods now at their limits, it has become"
}
],
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}