⌕ Поиск по атласу

NIST · ИТ · 8b3da1cf361aed3c0121

8b3da1cf361aed3c0121 · High Speed IGBT Module Transient Thermal Response Measurements for Model Validation

High Speed IGBT Module Transient Thermal Response Measurements for Model Validation

A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode

Официальный источник · 2003-10-12

Полные импортированные сведения карточки
{
  "title_en": "High Speed IGBT Module Transient Thermal Response Measurements for Model Validation",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2003-10-12",
  "date_original": "October 12, 2003",
  "url": "https://www.nist.gov/publications/high-speed-igbt-module-transient-thermal-response-measurements-model-validation",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "David W. Berning , John V. Reichl , Allen R. Hefner Jr. , Mora Hernandez, Colleen E. Hood , Jih-Sheng Lai",
  "abstract_excerpt_en": "A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode",
  "id": "8b3da1cf361aed3c0121",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "High Speed IGBT Module Transient Thermal Response Measurements for Model Validation",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2003-10-12",
      "date_original": "October 12, 2003",
      "url": "https://www.nist.gov/publications/high-speed-igbt-module-transient-thermal-response-measurements-model-validation",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "David W. Berning , John V. Reichl , Allen R. Hefner Jr. , Mora Hernandez, Colleen E. Hood , Jih-Sheng Lai",
      "abstract_excerpt_en": "A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode"
    }
  ],
  "translation_state": "none"
}