8b3da1cf361aed3c0121 · High Speed IGBT Module Transient Thermal Response Measurements for Model Validation
High Speed IGBT Module Transient Thermal Response Measurements for Model Validation
A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode
{
"title_en": "High Speed IGBT Module Transient Thermal Response Measurements for Model Validation",
"designation": "",
"series": "",
"status": "",
"date": "2003-10-12",
"date_original": "October 12, 2003",
"url": "https://www.nist.gov/publications/high-speed-igbt-module-transient-thermal-response-measurements-model-validation",
"source": "NIST Publications",
"display_en": "",
"authors_en": "David W. Berning , John V. Reichl , Allen R. Hefner Jr. , Mora Hernandez, Colleen E. Hood , Jih-Sheng Lai",
"abstract_excerpt_en": "A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode",
"id": "8b3da1cf361aed3c0121",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "High Speed IGBT Module Transient Thermal Response Measurements for Model Validation",
"designation": "",
"series": "",
"status": "",
"date": "2003-10-12",
"date_original": "October 12, 2003",
"url": "https://www.nist.gov/publications/high-speed-igbt-module-transient-thermal-response-measurements-model-validation",
"source": "NIST Publications",
"display_en": "",
"authors_en": "David W. Berning , John V. Reichl , Allen R. Hefner Jr. , Mora Hernandez, Colleen E. Hood , Jih-Sheng Lai",
"abstract_excerpt_en": "A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode"
}
],
"translation_state": "none"
}