8b57b3d54c7cd9bd4ffd · Characteristics and Ultilization of a New Class of Low On-Resistance MOS-Gated Power Device

{
  "title_en": "Characteristics and Ultilization of a New Class of Low On-Resistance MOS-Gated Power Device",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2001-09-01",
  "date_original": "September 1, 2001",
  "url": "https://www.nist.gov/publications/characteristics-and-ultilization-new-class-low-resistance-mos-gated-power-device",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Jih-Sheng Lai, B M. Song, R Zhou, Allen R. Hefner Jr. , David W. Berning , Chien-Chung Shen",
  "abstract_excerpt_en": "",
  "id": "8b57b3d54c7cd9bd4ffd",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Characteristics and Ultilization of a New Class of Low On-Resistance MOS-Gated Power Device",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2001-09-01",
      "date_original": "September 1, 2001",
      "url": "https://www.nist.gov/publications/characteristics-and-ultilization-new-class-low-resistance-mos-gated-power-device",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Jih-Sheng Lai, B M. Song, R Zhou, Allen R. Hefner Jr. , David W. Berning , Chien-Chung Shen",
      "abstract_excerpt_en": ""
    }
  ],
  "translation_state": "none"
}