8cbb2d4751364d82832e · Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator
Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator
Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the
{
"title_en": "Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator",
"designation": "",
"series": "",
"status": "",
"date": "2004-05-01",
"date_original": "May 1, 2004",
"url": "https://www.nist.gov/publications/silicon-carbide-pin-and-merged-pin-schottky-power-diode-models-implemented-saber",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , Alan Mantooth, J L. Duliere, David W. Berning , Ranbir Singh",
"abstract_excerpt_en": "Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the",
"id": "8cbb2d4751364d82832e",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator",
"designation": "",
"series": "",
"status": "",
"date": "2004-05-01",
"date_original": "May 1, 2004",
"url": "https://www.nist.gov/publications/silicon-carbide-pin-and-merged-pin-schottky-power-diode-models-implemented-saber",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , Alan Mantooth, J L. Duliere, David W. Berning , Ranbir Singh",
"abstract_excerpt_en": "Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the"
}
],
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