90d03556861c0758d12a · The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes

{
  "title_en": "The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2003-10-05",
  "date_original": "October 5, 2003",
  "url": "https://www.nist.gov/publications/role-carrier-lifetime-forward-bias-degradation-4h-sic-pin-diodes",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Allen R. Hefner Jr. , Ty R. McNutt , David W. Berning , Ranbir Singh , Adwoa Akuffo",
  "abstract_excerpt_en": "Abstract. The role of excess carrier lifetime reduction in the mechanism for on-state voltage (Vf) degradation of high voltage 4H-SiC PiN diodes is investigated. A method is developed to electrically monitor the emitter, base, and end region excess carrier",
  "id": "90d03556861c0758d12a",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2003-10-05",
      "date_original": "October 5, 2003",
      "url": "https://www.nist.gov/publications/role-carrier-lifetime-forward-bias-degradation-4h-sic-pin-diodes",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Allen R. Hefner Jr. , Ty R. McNutt , David W. Berning , Ranbir Singh , Adwoa Akuffo",
      "abstract_excerpt_en": "Abstract. The role of excess carrier lifetime reduction in the mechanism for on-state voltage (Vf) degradation of high voltage 4H-SiC PiN diodes is investigated. A method is developed to electrically monitor the emitter, base, and end region excess carrier"
    }
  ],
  "translation_state": "none"
}