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NIST · ИТ · 94c98c5527fe5ff7f8c7

94c98c5527fe5ff7f8c7 · Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications

Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications

A newly developed Silicon Carbide (SiC) Merged PiN Schottky (MPS) diode combines the best features of both Schottky and PiN diodes to obtain low on-state voltage drop, low leakage in the off-state, fast switching, and good high temperature characteristics

Официальный источник · 2000-12-31

Полные импортированные сведения карточки
{
  "title_en": "Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2000-12-31",
  "date_original": "December 31, 2000",
  "url": "https://www.nist.gov/publications/silicon-carbide-merged-pin-schottky-diode-switching-characteristics-and-evaluation",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Allen R. Hefner Jr. , David W. Berning , Jih-Sheng Lai, C Liu, Ranbir Singh",
  "abstract_excerpt_en": "A newly developed Silicon Carbide (SiC) Merged PiN Schottky (MPS) diode combines the best features of both Schottky and PiN diodes to obtain low on-state voltage drop, low leakage in the off-state, fast switching, and good high temperature characteristics",
  "id": "94c98c5527fe5ff7f8c7",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Silicon Carbide Merged PiN Schottky Diode Switching Characteristics and Evaluation for Power Supply Applications",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2000-12-31",
      "date_original": "December 31, 2000",
      "url": "https://www.nist.gov/publications/silicon-carbide-merged-pin-schottky-diode-switching-characteristics-and-evaluation",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Allen R. Hefner Jr. , David W. Berning , Jih-Sheng Lai, C Liu, Ranbir Singh",
      "abstract_excerpt_en": "A newly developed Silicon Carbide (SiC) Merged PiN Schottky (MPS) diode combines the best features of both Schottky and PiN diodes to obtain low on-state voltage drop, low leakage in the off-state, fast switching, and good high temperature characteristics"
    }
  ],
  "translation_state": "none"
}