99676a7796ffdc595b5a · Status of the DARPA WBST High Power Electronics Program in SiC Device Development and Technology Transition

{
  "title_en": "Status of the DARPA WBST High Power Electronics Program in SiC Device Development and Technology Transition",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2007-03-19",
  "date_original": "March 19, 2007",
  "url": "https://www.nist.gov/publications/status-darpa-wbst-high-power-electronics-program-sic-device-development-and-technology",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Allen R. Hefner Jr. , Sharon Beermann-Curtin",
  "abstract_excerpt_en": "The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize industriall and military power generation, transmission and distribution systems. The DARPA Wide Bandgap Semiconductor Technology (WBST)",
  "id": "99676a7796ffdc595b5a",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Status of the DARPA WBST High Power Electronics Program in SiC Device Development and Technology Transition",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2007-03-19",
      "date_original": "March 19, 2007",
      "url": "https://www.nist.gov/publications/status-darpa-wbst-high-power-electronics-program-sic-device-development-and-technology",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Allen R. Hefner Jr. , Sharon Beermann-Curtin",
      "abstract_excerpt_en": "The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize industriall and military power generation, transmission and distribution systems. The DARPA Wide Bandgap Semiconductor Technology (WBST)"
    }
  ],
  "translation_state": "none"
}