99bc4ff7c96197222b14 · Model Verification with Measurement Uncertainty
Model Verification with Measurement Uncertainty
We verify a model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process, and use them to
{
"title_en": "Model Verification with Measurement Uncertainty",
"designation": "",
"series": "",
"status": "",
"date": "2016-11-01",
"date_original": "November 1, 2016",
"url": "https://www.nist.gov/publications/model-verification-measurement-uncertainty",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Dylan F. Williams , Richard A. Chamberlin , Jerome G. Cheron , Wei Zhao, Urteaga Miguel",
"abstract_excerpt_en": "We verify a model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process, and use them to",
"id": "99bc4ff7c96197222b14",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Model Verification with Measurement Uncertainty",
"designation": "",
"series": "",
"status": "",
"date": "2016-11-01",
"date_original": "November 1, 2016",
"url": "https://www.nist.gov/publications/model-verification-measurement-uncertainty",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Dylan F. Williams , Richard A. Chamberlin , Jerome G. Cheron , Wei Zhao, Urteaga Miguel",
"abstract_excerpt_en": "We verify a model for state-of-the-art 250 nm heterojunction bipolar transistors with large-signal measurements. We demonstrate the propagation of correlated measurement uncertainties through the model-extraction and verification process, and use them to"
}
],
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}