a08d2f5f1d5dc4c92f3e · Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

{
  "title_en": "Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2006-10-01",
  "date_original": "October 1, 2006",
  "url": "https://www.nist.gov/publications/recent-advances-high-voltage-high-frequency-silicon-carbide-power-device",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Allen R. Hefner Jr. , Ryu Sei-Hyung, Hull Brett, David W. Berning , Colleen E. Hood , Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez , Tam H. Duong , Adwoa Akuffo , Madelaine H. Hernandez",
  "abstract_excerpt_en": "The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power",
  "id": "a08d2f5f1d5dc4c92f3e",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2006-10-01",
      "date_original": "October 1, 2006",
      "url": "https://www.nist.gov/publications/recent-advances-high-voltage-high-frequency-silicon-carbide-power-device",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Allen R. Hefner Jr. , Ryu Sei-Hyung, Hull Brett, David W. Berning , Colleen E. Hood , Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez , Tam H. Duong , Adwoa Akuffo , Madelaine H. Hernandez",
      "abstract_excerpt_en": "The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power"
    }
  ],
  "translation_state": "none"
}