NIST · ИТ · aa3e3b004bac9f8d4421
IGBT Half-Bridge Shoot-Through Characterization for Model Validation
A circuit is described for making a variety of measurements on half-bridge Insulated Gate Bipolar Transistor (IGBT) pairs for validating IGBT models. The circuit incorporates two robust isolated gate drives for the IGBTs. Each IGBT is driven with an eight
NIST · ИТОфициальный источник · 1996-12-31
{
"title_en": "IGBT Half-Bridge Shoot-Through Characterization for Model Validation",
"designation": "",
"series": "",
"status": "",
"date": "1996-12-31",
"date_original": "December 31, 1996",
"url": "https://www.nist.gov/publications/igbt-half-bridge-shoot-through-characterization-model-validation",
"source": "NIST Publications",
"display_en": "",
"authors_en": "David W. Berning , Allen R. Hefner Jr.",
"abstract_excerpt_en": "A circuit is described for making a variety of measurements on half-bridge Insulated Gate Bipolar Transistor (IGBT) pairs for validating IGBT models. The circuit incorporates two robust isolated gate drives for the IGBTs. Each IGBT is driven with an eight",
"id": "aa3e3b004bac9f8d4421",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "IGBT Half-Bridge Shoot-Through Characterization for Model Validation",
"designation": "",
"series": "",
"status": "",
"date": "1996-12-31",
"date_original": "December 31, 1996",
"url": "https://www.nist.gov/publications/igbt-half-bridge-shoot-through-characterization-model-validation",
"source": "NIST Publications",
"display_en": "",
"authors_en": "David W. Berning , Allen R. Hefner Jr.",
"abstract_excerpt_en": "A circuit is described for making a variety of measurements on half-bridge Insulated Gate Bipolar Transistor (IGBT) pairs for validating IGBT models. The circuit incorporates two robust isolated gate drives for the IGBTs. Each IGBT is driven with an eight"
}
],
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}