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aa46d1d496ec5f4c80c3 · Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy

Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy

Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved

Официальный источник · 2013-10-25

Полные импортированные сведения карточки
{
  "title_en": "Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2013-10-25",
  "date_original": "October 25, 2013",
  "url": "https://www.nist.gov/publications/three-dimensional-deep-sub-wavelength-defect-detection-using-lambda-193-nm-optical",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Bryan M. Barnes , Martin Y. Sohn , Francois R. Goasmat , Hui Zhou , Andras Vladar , Richard M. Silver , Abraham Arceo",
  "abstract_excerpt_en": "Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved",
  "id": "aa46d1d496ec5f4c80c3",
  "sources": [
    "NIST Publications"
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    {
      "title_en": "Three-dimensional deep sub-wavelength defect detection using (lambda) = 193 nm optical microscopy",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2013-10-25",
      "date_original": "October 25, 2013",
      "url": "https://www.nist.gov/publications/three-dimensional-deep-sub-wavelength-defect-detection-using-lambda-193-nm-optical",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Bryan M. Barnes , Martin Y. Sohn , Francois R. Goasmat , Hui Zhou , Andras Vladar , Richard M. Silver , Abraham Arceo",
      "abstract_excerpt_en": "Identifying defects in photolithographic patterning is a persistent challenge in semiconductor manufacturing. Well-established optical methods in current use are jeopardized by upcoming sub-20 nm device dimensions. Volumetric processing of focus-resolved"
    }
  ],
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