NIST · ИТ · aa6f848937c709a160a1
Insulator-quantum Hall transition in monolayer epitaxial graphene
We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity (rho)sub(xx), which are signatures of the
NIST · ИТОфициальный источник · 2016-07-22
{
"title_en": "Insulator-quantum Hall transition in monolayer epitaxial graphene",
"designation": "",
"series": "",
"status": "",
"date": "2016-07-22",
"date_original": "July 22, 2016",
"url": "https://www.nist.gov/publications/insulator-quantum-hall-transition-monolayer-epitaxial-graphene",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Lung-I Huang , Yanfei Yang , Randolph Elmquist , Shun-Tsung Lo, Fan-Hung H. Liu , Chi-Te Laing",
"abstract_excerpt_en": "We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity (rho)sub(xx), which are signatures of the",
"id": "aa6f848937c709a160a1",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Insulator-quantum Hall transition in monolayer epitaxial graphene",
"designation": "",
"series": "",
"status": "",
"date": "2016-07-22",
"date_original": "July 22, 2016",
"url": "https://www.nist.gov/publications/insulator-quantum-hall-transition-monolayer-epitaxial-graphene",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Lung-I Huang , Yanfei Yang , Randolph Elmquist , Shun-Tsung Lo, Fan-Hung H. Liu , Chi-Te Laing",
"abstract_excerpt_en": "We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity (rho)sub(xx), which are signatures of the"
}
],
"translation_state": "none"
}