NIST · ИТ · abf2f707baf955dd0fa1
Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization
A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A fast
NIST · ИТОфициальный источник · 2006-10-01
{
"title_en": "Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization",
"designation": "",
"series": "",
"status": "",
"date": "2006-10-01",
"date_original": "October 1, 2006",
"url": "https://www.nist.gov/publications/generalized-test-bed-high-voltage-high-power-sic-device-characterization",
"source": "NIST Publications",
"display_en": "",
"authors_en": "David W. Berning , Allen R. Hefner Jr. , J J. Rodriguez, Colleen E. Hood , Angel Rivera",
"abstract_excerpt_en": "A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A fast",
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{
"title_en": "Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization",
"designation": "",
"series": "",
"status": "",
"date": "2006-10-01",
"date_original": "October 1, 2006",
"url": "https://www.nist.gov/publications/generalized-test-bed-high-voltage-high-power-sic-device-characterization",
"source": "NIST Publications",
"display_en": "",
"authors_en": "David W. Berning , Allen R. Hefner Jr. , J J. Rodriguez, Colleen E. Hood , Angel Rivera",
"abstract_excerpt_en": "A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A fast"
}
],
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}