b7c25c39857f18789a51 · Parameter Extraction Sequence for Silicon Carbide Schottky, Merged PiN Schottky, and PiN Power Diode Models

{
  "title_en": "Parameter Extraction Sequence for Silicon Carbide Schottky, Merged PiN Schottky, and PiN Power Diode Models",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2002-08-01",
  "date_original": "August 1, 2002",
  "url": "https://www.nist.gov/publications/parameter-extraction-sequence-silicon-carbide-schottky-merged-pin-schottky-and-pin",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , Alan Mantooth, J L. Duliere, David W. Berning , Ranbir Singh",
  "abstract_excerpt_en": "A detailed parameter extraction sequence for Silicon Carbide (SiC) power diode models is presented. The sequence is applicable to any SiC diode technology. Also, the model is demonstrated for a 1.5-kV, 10-A SiC Merged PiN Schottky (MPS); 5-kV, 20-A PiN; a",
  "id": "b7c25c39857f18789a51",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Parameter Extraction Sequence for Silicon Carbide Schottky, Merged PiN Schottky, and PiN Power Diode Models",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2002-08-01",
      "date_original": "August 1, 2002",
      "url": "https://www.nist.gov/publications/parameter-extraction-sequence-silicon-carbide-schottky-merged-pin-schottky-and-pin",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , Alan Mantooth, J L. Duliere, David W. Berning , Ranbir Singh",
      "abstract_excerpt_en": "A detailed parameter extraction sequence for Silicon Carbide (SiC) power diode models is presented. The sequence is applicable to any SiC diode technology. Also, the model is demonstrated for a 1.5-kV, 10-A SiC Merged PiN Schottky (MPS); 5-kV, 20-A PiN; a"
    }
  ],
  "translation_state": "none"
}