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ce00c0b6f55ce30e1f53 · Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for

Официальный источник · 2006-07-01

Полные импортированные сведения карточки
{
  "title_en": "Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2006-07-01",
  "date_original": "July 1, 2006",
  "url": "https://www.nist.gov/publications/computer-controlled-characterization-high-voltage-high-frequency-sic-devices",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr. , David W. Berning , Colleen E. Hood , S. Olcum",
  "abstract_excerpt_en": "Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for",
  "id": "ce00c0b6f55ce30e1f53",
  "sources": [
    "NIST Publications"
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  "source_records": [
    {
      "title_en": "Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2006-07-01",
      "date_original": "July 1, 2006",
      "url": "https://www.nist.gov/publications/computer-controlled-characterization-high-voltage-high-frequency-sic-devices",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr. , David W. Berning , Colleen E. Hood , S. Olcum",
      "abstract_excerpt_en": "Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for"
    }
  ],
  "translation_state": "none"
}