NIST · ИТ · ce36b2a037892548dc3b
Characterization and Modeling of Silicon-Carbide Power Devices
New Power semiconductor devices have begun to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization are required for system designers to adopt the new
NIST · ИТОфициальный источник · 2001-12-01
{
"title_en": "Characterization and Modeling of Silicon-Carbide Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2001-12-01",
"date_original": "December 1, 2001",
"url": "https://www.nist.gov/publications/characterization-and-modeling-silicon-carbide-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Allen R. Hefner Jr. , David W. Berning , Ty R. McNutt , Alan Mantooth, Jih-Sheng Lai, Ranbir Singh",
"abstract_excerpt_en": "New Power semiconductor devices have begun to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization are required for system designers to adopt the new",
"id": "ce36b2a037892548dc3b",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Characterization and Modeling of Silicon-Carbide Power Devices",
"designation": "",
"series": "",
"status": "",
"date": "2001-12-01",
"date_original": "December 1, 2001",
"url": "https://www.nist.gov/publications/characterization-and-modeling-silicon-carbide-power-devices",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Allen R. Hefner Jr. , David W. Berning , Ty R. McNutt , Alan Mantooth, Jih-Sheng Lai, Ranbir Singh",
"abstract_excerpt_en": "New Power semiconductor devices have begun to emerge that utilize the advantages of silicon carbide (SiC). As SiC power device types are introduced, circuit performance and reliability characterization are required for system designers to adopt the new"
}
],
"translation_state": "none"
}