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cef3ffc9545014898c1b · SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications

SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications

The electrical performance of Silicon Carbide (SiC) diodes are evaluated and compared to commercially available Silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery

Официальный источник · 2001-03-01

Полные импортированные сведения карточки
{
  "title_en": "SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2001-03-01",
  "date_original": "March 1, 2001",
  "url": "https://www.nist.gov/publications/sic-power-diodes-provide-breakthrough-performance-wide-range-applications",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Allen R. Hefner Jr. , Ranbir Singh, Jih-Sheng Lai, David W. Berning , Sebastien Bouche , Christophe C. Chapuy",
  "abstract_excerpt_en": "The electrical performance of Silicon Carbide (SiC) diodes are evaluated and compared to commercially available Silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery",
  "id": "cef3ffc9545014898c1b",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2001-03-01",
      "date_original": "March 1, 2001",
      "url": "https://www.nist.gov/publications/sic-power-diodes-provide-breakthrough-performance-wide-range-applications",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Allen R. Hefner Jr. , Ranbir Singh, Jih-Sheng Lai, David W. Berning , Sebastien Bouche , Christophe C. Chapuy",
      "abstract_excerpt_en": "The electrical performance of Silicon Carbide (SiC) diodes are evaluated and compared to commercially available Silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery"
    }
  ],
  "translation_state": "none"
}