NIST · ИТ · d4e96a353442f4cee94e
In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition
Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor
NIST · ИТОфициальный источник · 2011-07-12
{
"title_en": "In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition",
"designation": "",
"series": "",
"status": "",
"date": "2011-07-12",
"date_original": "July 12, 2011",
"url": "https://www.nist.gov/publications/situ-gas-phase-measurements-during-metal-alkylamide-atomic-layer-deposition",
"source": "NIST Publications",
"display_en": "",
"authors_en": "James E. Maslar , William A. Kimes , Brent A. Sperling",
"abstract_excerpt_en": "Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor",
"id": "d4e96a353442f4cee94e",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition",
"designation": "",
"series": "",
"status": "",
"date": "2011-07-12",
"date_original": "July 12, 2011",
"url": "https://www.nist.gov/publications/situ-gas-phase-measurements-during-metal-alkylamide-atomic-layer-deposition",
"source": "NIST Publications",
"display_en": "",
"authors_en": "James E. Maslar , William A. Kimes , Brent A. Sperling",
"abstract_excerpt_en": "Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor"
}
],
"translation_state": "none"
}