d642f6b32dcda3865e37 · Optical volumetric inspection of sub-20 nm patterned defects with wafer noise

{
  "title_en": "Optical volumetric inspection of sub-20 nm patterned defects with wafer noise",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2014-04-02",
  "date_original": "April 2, 2014",
  "url": "https://www.nist.gov/publications/optical-volumetric-inspection-sub-20-nm-patterned-defects-wafer-noise",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Bryan M. Barnes , Francois R. Goasmat , Martin Y. Sohn , Hui Zhou , Richard M. Silver , Andras Vladar , Abraham Arceo",
  "abstract_excerpt_en": "We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D",
  "id": "d642f6b32dcda3865e37",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Optical volumetric inspection of sub-20 nm patterned defects with wafer noise",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2014-04-02",
      "date_original": "April 2, 2014",
      "url": "https://www.nist.gov/publications/optical-volumetric-inspection-sub-20-nm-patterned-defects-wafer-noise",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Bryan M. Barnes , Francois R. Goasmat , Martin Y. Sohn , Hui Zhou , Richard M. Silver , Andras Vladar , Abraham Arceo",
      "abstract_excerpt_en": "We have previously introduced a new data analysis method that more thoroughly utilizes scattered optical intensity data collected during defect inspection using bright-field microscopy. This volumetric approach allows conversion of focus resolved 2-D"
    }
  ],
  "translation_state": "none"
}