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e12539640273c181e17b · A High-Speed Thermal Imaging System for Semiconductor Device Analysis

A High-Speed Thermal Imaging System for Semiconductor Device Analysis

A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a silicon chip with 1 υs time, and 15 υm spatial resolution. The system uses virtual instrument

Официальный источник · 2001-04-01

Полные импортированные сведения карточки
{
  "title_en": "A High-Speed Thermal Imaging System for Semiconductor Device Analysis",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2001-04-01",
  "date_original": "April 1, 2001",
  "url": "https://www.nist.gov/publications/high-speed-thermal-imaging-system-semiconductor-device-analysis",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Allen R. Hefner Jr. , David W. Berning , David L. Blackburn , Christophe C. Chapuy , Sebastien Bouche",
  "abstract_excerpt_en": "A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a silicon chip with 1 υs time, and 15 υm spatial resolution. The system uses virtual instrument",
  "id": "e12539640273c181e17b",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "A High-Speed Thermal Imaging System for Semiconductor Device Analysis",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2001-04-01",
      "date_original": "April 1, 2001",
      "url": "https://www.nist.gov/publications/high-speed-thermal-imaging-system-semiconductor-device-analysis",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Allen R. Hefner Jr. , David W. Berning , David L. Blackburn , Christophe C. Chapuy , Sebastien Bouche",
      "abstract_excerpt_en": "A new high-speed transient thermal imaging system is presented that provides the capability to measure the transient temperature distributions on the surface of a silicon chip with 1 υs time, and 15 υm spatial resolution. The system uses virtual instrument"
    }
  ],
  "translation_state": "none"
}