NIST · ИТ · e2b7a7ff14c63a358d31
Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter
NIST · ИТОфициальный источник · 2015-05-10
{
"title_en": "Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA",
"designation": "",
"series": "",
"status": "",
"date": "2015-05-10",
"date_original": "May 10, 2015",
"url": "https://www.nist.gov/publications/electro-thermal-simulation-1200-v-4h-sic-mosfet-short-circuit-soa",
"source": "NIST Publications",
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"authors_en": "Tam H. Duong , Jose M. Ortiz , David W. Berning , Allen R. Hefner Jr. , Sei-Hyung Ryu, John W. Palmour",
"abstract_excerpt_en": "The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter",
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{
"title_en": "Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA",
"designation": "",
"series": "",
"status": "",
"date": "2015-05-10",
"date_original": "May 10, 2015",
"url": "https://www.nist.gov/publications/electro-thermal-simulation-1200-v-4h-sic-mosfet-short-circuit-soa",
"source": "NIST Publications",
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"authors_en": "Tam H. Duong , Jose M. Ortiz , David W. Berning , Allen R. Hefner Jr. , Sei-Hyung Ryu, John W. Palmour",
"abstract_excerpt_en": "The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter"
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