NIST · ИТ · e76121337c2f64ac9123
Characteristics and Utilization of a New Class of Low On-Resistance MOS-Gated Power Device
A new class of MOS-gated power semiconductor devices Cool MOS has recently been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of the high-voltage power MOSFETs. From the application point of
NIST · ИТОфициальный источник · 1999-10-03
{
"title_en": "Characteristics and Utilization of a New Class of Low On-Resistance MOS-Gated Power Device",
"designation": "",
"series": "",
"status": "",
"date": "1999-10-03",
"date_original": "October 3, 1999",
"url": "https://www.nist.gov/publications/characteristics-and-utilization-new-class-low-resistance-mos-gated-power-device",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Jih-Sheng Lai, David W. Berning , Allen R. Hefner Jr. , Chien-Chung Shen, B M. Song, R Zhou",
"abstract_excerpt_en": "A new class of MOS-gated power semiconductor devices Cool MOS has recently been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of the high-voltage power MOSFETs. From the application point of",
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"sources": [
"NIST Publications"
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"source_records": [
{
"title_en": "Characteristics and Utilization of a New Class of Low On-Resistance MOS-Gated Power Device",
"designation": "",
"series": "",
"status": "",
"date": "1999-10-03",
"date_original": "October 3, 1999",
"url": "https://www.nist.gov/publications/characteristics-and-utilization-new-class-low-resistance-mos-gated-power-device",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Jih-Sheng Lai, David W. Berning , Allen R. Hefner Jr. , Chien-Chung Shen, B M. Song, R Zhou",
"abstract_excerpt_en": "A new class of MOS-gated power semiconductor devices Cool MOS has recently been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of the high-voltage power MOSFETs. From the application point of"
}
],
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}