NIST · ИТ · f10d618a47bed17e9f66
Resistivity Dominated by Surface Scattering in Sub-50 nm Cu Wires
The electron scattering mechanisms in sub-50nm copper lines were investigated to understand the extendibility of copper interconnects when the line width or thickness is less than the mean free path. Electron-beam lithography and a dual hardmask approach
NIST · ИТОфициальный источник · 2010-01-25
{
"title_en": "Resistivity Dominated by Surface Scattering in Sub-50 nm Cu Wires",
"designation": "",
"series": "",
"status": "",
"date": "2010-01-25",
"date_original": "January 25, 2010",
"url": "https://www.nist.gov/publications/resistivity-dominated-surface-scattering-sub-50-nm-cu-wires",
"source": "NIST Publications",
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"authors_en": "Rebekah L. Graham, Glenn Alers, Thomas Mountsier, N. Shamma, S. Dhuey, R. H. Cabrini, Roy H. Geiss , David T. Read , S. Peddeti",
"abstract_excerpt_en": "The electron scattering mechanisms in sub-50nm copper lines were investigated to understand the extendibility of copper interconnects when the line width or thickness is less than the mean free path. Electron-beam lithography and a dual hardmask approach",
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{
"title_en": "Resistivity Dominated by Surface Scattering in Sub-50 nm Cu Wires",
"designation": "",
"series": "",
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"date": "2010-01-25",
"date_original": "January 25, 2010",
"url": "https://www.nist.gov/publications/resistivity-dominated-surface-scattering-sub-50-nm-cu-wires",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Rebekah L. Graham, Glenn Alers, Thomas Mountsier, N. Shamma, S. Dhuey, R. H. Cabrini, Roy H. Geiss , David T. Read , S. Peddeti",
"abstract_excerpt_en": "The electron scattering mechanisms in sub-50nm copper lines were investigated to understand the extendibility of copper interconnects when the line width or thickness is less than the mean free path. Electron-beam lithography and a dual hardmask approach"
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