NIST · ИТ · f251d275f707ebb7a126
Switching Characteristics of NPT- and PT-IGBTs Under Zero-Voltage Switching Conditions
In this paper, switching characteristics of non-punch through (NPT) and punch through (PT) Insulated Gate Bipolar Transistors (IGBTs) are evaluated under zero-voltage switching (ZVS) conditions. Through the physics-based modeling and experiments, the
NIST · ИТОфициальный источник · 1999-10-05
{
"title_en": "Switching Characteristics of NPT- and PT-IGBTs Under Zero-Voltage Switching Conditions",
"designation": "",
"series": "",
"status": "",
"date": "1999-10-05",
"date_original": "October 5, 1999",
"url": "https://www.nist.gov/publications/switching-characteristics-npt-and-pt-igbts-under-zero-voltage-switching-conditions",
"source": "NIST Publications",
"display_en": "",
"authors_en": "B M. Song, Huibin Zhu , Jih-Sheng Lai, Allen R. Hefner Jr.",
"abstract_excerpt_en": "In this paper, switching characteristics of non-punch through (NPT) and punch through (PT) Insulated Gate Bipolar Transistors (IGBTs) are evaluated under zero-voltage switching (ZVS) conditions. Through the physics-based modeling and experiments, the",
"id": "f251d275f707ebb7a126",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Switching Characteristics of NPT- and PT-IGBTs Under Zero-Voltage Switching Conditions",
"designation": "",
"series": "",
"status": "",
"date": "1999-10-05",
"date_original": "October 5, 1999",
"url": "https://www.nist.gov/publications/switching-characteristics-npt-and-pt-igbts-under-zero-voltage-switching-conditions",
"source": "NIST Publications",
"display_en": "",
"authors_en": "B M. Song, Huibin Zhu , Jih-Sheng Lai, Allen R. Hefner Jr.",
"abstract_excerpt_en": "In this paper, switching characteristics of non-punch through (NPT) and punch through (PT) Insulated Gate Bipolar Transistors (IGBTs) are evaluated under zero-voltage switching (ZVS) conditions. Through the physics-based modeling and experiments, the"
}
],
"translation_state": "none"
}