f98a8614670dab59284a · Adhesion, Copper Voiding, and Debonding Kinetics of Copper/Dielectric Diffusion Barrier Films
Adhesion, Copper Voiding, and Debonding Kinetics of Copper/Dielectric Diffusion Barrier Films
Effects of the chemistry of electroplated copper films on stress-induced voiding and adhesion between the films and a SiN barrier layer are reported. The void density as observed by scanning electron microscopy decreased markedly with increasing Cu purity
{
"title_en": "Adhesion, Copper Voiding, and Debonding Kinetics of Copper/Dielectric Diffusion Barrier Films",
"designation": "",
"series": "",
"status": "",
"date": "2009-10-13",
"date_original": "October 13, 2009",
"url": "https://www.nist.gov/publications/adhesion-copper-voiding-and-debonding-kinetics-copperdielectric-diffusion-barrier-films",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ryan P. Birringer, Roey Shaviv, Thomas Mountsier, Jon Reid, Jian Zhou, Roy H. Geiss , David T. Read , Reinhold Dauskardt",
"abstract_excerpt_en": "Effects of the chemistry of electroplated copper films on stress-induced voiding and adhesion between the films and a SiN barrier layer are reported. The void density as observed by scanning electron microscopy decreased markedly with increasing Cu purity",
"id": "f98a8614670dab59284a",
"sources": [
"NIST Publications"
],
"source_records": [
{
"title_en": "Adhesion, Copper Voiding, and Debonding Kinetics of Copper/Dielectric Diffusion Barrier Films",
"designation": "",
"series": "",
"status": "",
"date": "2009-10-13",
"date_original": "October 13, 2009",
"url": "https://www.nist.gov/publications/adhesion-copper-voiding-and-debonding-kinetics-copperdielectric-diffusion-barrier-films",
"source": "NIST Publications",
"display_en": "",
"authors_en": "Ryan P. Birringer, Roey Shaviv, Thomas Mountsier, Jon Reid, Jian Zhou, Roy H. Geiss , David T. Read , Reinhold Dauskardt",
"abstract_excerpt_en": "Effects of the chemistry of electroplated copper films on stress-induced voiding and adhesion between the films and a SiN barrier layer are reported. The void density as observed by scanning electron microscopy decreased markedly with increasing Cu purity"
}
],
"translation_state": "none"
}