fd5aa719008c5032e1ea · Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator

{
  "title_en": "Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator",
  "designation": "",
  "series": "",
  "status": "",
  "date": "2001-06-30",
  "date_original": "June 30, 2001",
  "url": "https://www.nist.gov/publications/silicon-carbide-pin-and-merged-pin-schottky-power-diode-models-implemented-saber-0",
  "source": "NIST Publications",
  "display_en": "",
  "authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , A. Montooth, J L. Duliere, David W. Berning , Ranbir Singh",
  "abstract_excerpt_en": "Dynamic compact electrothermal models are developed for Silicon Carbide Power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN diodes. The models are verified for on-state characteristics? temperature",
  "id": "fd5aa719008c5032e1ea",
  "sources": [
    "NIST Publications"
  ],
  "source_records": [
    {
      "title_en": "Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator",
      "designation": "",
      "series": "",
      "status": "",
      "date": "2001-06-30",
      "date_original": "June 30, 2001",
      "url": "https://www.nist.gov/publications/silicon-carbide-pin-and-merged-pin-schottky-power-diode-models-implemented-saber-0",
      "source": "NIST Publications",
      "display_en": "",
      "authors_en": "Ty R. McNutt , Allen R. Hefner Jr. , A. Montooth, J L. Duliere, David W. Berning , Ranbir Singh",
      "abstract_excerpt_en": "Dynamic compact electrothermal models are developed for Silicon Carbide Power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN diodes. The models are verified for on-state characteristics? temperature"
    }
  ],
  "translation_state": "none",
  "possible_title_matches": 1
}